Molybdenum oxide semiconductor sheets provide higher conductivity
Researchers at the Commonwealth Scientific and Industrial Research Organization (CSIRO) and the Royal Melbourne Institute of Technology (RMIT), Australia, have developed a thin sheet of molybdenum oxide semiconductor that conduct electricity at ultra-high speeds. The researchers used an exfoliation process to create layers ~11 nm thick. The material was manipulated to convert it into a semiconductor, and nanoscale transistors were then fabricated.
The CSIRO’s Dr. Serge Zhuiykov says the new nanomaterial is made up of layered sheets similar to graphite layers that make up a pencil’s core. Within these layers, electrons are able to zip through at high speeds with minimal scattering.
The researchers were able to remove “road blocks” that could obstruct the electrons, an essential step for the development of high-speed electronics. “Instead of scattering when they hit road blocks, as they would in conventional materials, they can simply pass through this new material and get through the structure faster,” says RMIT Professor Kalantar-zadeh. “Quite simply, if electrons can pass through a structure quicker, we can build devices that are smaller and transfer data at much higher speeds.”
“While more work needs to be done before we can develop actual gadgets using this new 2D nano-material, this breakthrough lays the foundation for a new electronics revolution and we look forward to exploring its potential.”
The material was described in a paper titled “Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide,” in the January issue of Advanced Materials.